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參數(shù)資料
| 型號(hào)： | 2SK1156 |
| 元件分類： | JFETs |
| 英文描述： | 1.5 ohm, POWER, FET, TO-220AB |
| 文件頁(yè)數(shù)： | 5/9頁(yè) |
| 文件大?。?/td> | 47K |
| 代理商： | 2SK1156 |
2SK1155, 2SK1156
5
10
820
Gate to Source Voltage VGS (V)
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
8
2
412
16
0
4
6
ID = 1 A
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
2 A
Pulse Test
5 A
10
250
Drain Current ID (A)
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
5
0.1
1.0
5
20
0.5
1.0
2
Static Drain to Source on State
Resistance vs. Drain Current
VGS = 10 V
Pulse Test
0.2
10
15 V
0.5
5
40
160
Case Temperature TC (°C)
Static
Drain
to
Source
on
State
Resistance
R
D
S
(on)
(
)
4
1
0
80
120
0
2
3
Static Drain to Source on State
Resistance vs. Temperature
VGS = 10 V
Pulse Test
1 A
ID = 5 A
–40
2 A
10
0.2
5
Drain Current ID (A)
Forward
Transfer
Admittance
yfs
(S)
5
0.5
0.1
0.5
2
0.1
1.0
2
Forward Transfer Admittance
vs. Drain Current
–25°C
VDS = 20 V
Pulse Test
0.05
0.2
1.0
TC = 25°C
75°C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK1162-E | 10 A, 500 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1162-E | 10 A, 500 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1161-E | 10 A, 450 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1162 | 10 A, 500 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1161 | 10 A, 450 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1156(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1156-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK1157 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK1157(E) | 制造商:Renesas Electronics Corporation 功能描述: |
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