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參數(shù)資料
| 型號(hào)： | 2SK1156 |
| 元件分類： | JFETs |
| 英文描述： | 1.5 ohm, POWER, FET, TO-220AB |
| 文件頁(yè)數(shù)： | 4/9頁(yè) |
| 文件大?。?/td> | 47K |
| 代理商： | 2SK1156 |
2SK1155, 2SK1156
4
60
40
20
0
50
100
150
Case Temperature TC (°C)
Channel
Dissipation
Pch
(W)
Power vs. Temperature Derating
50
10
1.0
0.05
10
100
1,000
Drain to Source Voltage VDS (V)
Drain
Current
I
D
(A)
Maximum Safe Operation Area
20
2
0.2
1
3
30
300
Ta = 25°C
2SK1156
2SK1155
10
s
100
s
1 ms
DC
Operation
(T
C =
25°C)
PW
=
10
ms
(1
shot)
Operation
in
this
Area
is Limited
by
R DS
(on)
5
0.5
0.1
10
20
50
Drain to Source Voltage VDS (V)
Drain
Current
I
D
(A)
Typical Output Characteristics
8
2
10
30
40
0
4
6
5.0 V
4.5 V
VGS = 4 V
5.5 V
6 V
10 V
Pulse Test
10
410
Gate to Source Voltage VGS (V)
Drain
Current
I
D
(A)
Typical Transfer Characteristics
8
2
26
8
–25°C
0
4
6
VDS = 20 V
Pulse Test
75°C
TC = 25°C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK1162-E | 10 A, 500 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1162-E | 10 A, 500 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1161-E | 10 A, 450 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1162 | 10 A, 500 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1161 | 10 A, 450 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1156(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1156-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK1157 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK1157(E) | 制造商:Renesas Electronics Corporation 功能描述: |
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