參數(shù)資料
型號: 2SK1152STL-E
元件分類: JFETs
英文描述: 1.5 A, 500 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: SC-63, DPAK-3
文件頁數(shù): 7/10頁
文件大?。?/td> 102K
代理商: 2SK1152STL-E
2SK1151(L), 2SK1151(S), 2SK1152(L), 2SK1152(S)
Rev.2.00 Sep 07, 2005 page 4 of 7
10
8
6
4
2
0
40
80
120
160
Case Temperature TC (°C)
–40
Static Drain to Source on State
Resistance vs. Temperature
VGS = 10 V
Pulse Test
Static
Drain-Source
on
State
Resistance
R
DS
(on)
(
)
ID = 2 A
0.5 A
1 A
Forward Transfer Admittance
vs. Drain Current
5
2
1.0
0.5
0.05
0.1
0.2
1.0
2
5
Drain Current ID (A)
0.1
0.2
0.5
VDS = 20 V
Pulse Test
75
°C
–25
°C
Forward
Transfer
Admittance
y
fs
(S)
TC = 25°C
Body to Drain Diode Reverse
Recovery Time
di/dt = 100 A/
s, Ta = 25°C
VGS = 0
Pulse Test
Reverse Drain Current IDR (A)
Reverse
Recovery
Time
t
rr
(ns)
1,000
500
100
50
20
10
200
0.05
0.1
0.2
0.5
1.0
2
5
Typical Capacitance
vs. Drain to Source Voltage
1,000
100
10
1
010
20
30
40
50
Drain to Source Voltage VDS (V)
Capacitance
C
(pF)
Coss
Ciss
Crss
VGS = 0
f = 1 MHz
Dynamic Input Characteristics
500
400
300
200
100
0
24
6
8
10
Gate Charge Qg (nc)
Drain
to
Source
Voltage
V
DS
(V)
20
16
12
8
4
0
Gate
to
Source
Voltage
V
GS
(V)
400 V
100 V
VDS
ID = 1.5 A
VGS
250 V
VDD = 400 V
250 V
100 V
Switching Characteristics
100
20
10
5
2
1
50
Switching
Time
t
(ns)
0.05
0.1
0.2
0.5
1.0
2
5
Drain Current ID (A)
tf
VGS = 10 V VDD = 30 V
PW = 2
s, duty < 1%
td (on)
tr
td (off)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK1153 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET
2SK1153(E) 制造商:Renesas Electronics Corporation 功能描述:
2SK1153-E 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET
2SK1154 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET