參數(shù)資料
型號: 2SK1152STL-E
元件分類: JFETs
英文描述: 1.5 A, 500 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: SC-63, DPAK-3
文件頁數(shù): 6/10頁
文件大?。?/td> 102K
代理商: 2SK1152STL-E
2SK1151(L), 2SK1151(S), 2SK1152(L), 2SK1152(S)
Rev.2.00 Sep 07, 2005 page 3 of 7
Main Characteristics
Power vs. Temperature Derating
30
20
10
0
Channel
Dissipation
Pch
(W)
50
100
150
Case Temperature TC (°C)
Maximum Safe Operation Area
10
1
10
1,000
Drain to Source Voltage VDS (V)
3
0.1
0.03
1 ms
100
Ta = 25
°C
DC
Operation
(T
C =
25
°C)
PW
=
10
ms
(1
Shot)
2SK1151
2SK1152
Drain
Current
I
D
(A)
0.01
0.3
1.0
10
s
Operation
in
this
area
is
limited
by
R
DS
(on)
Typical Output Characteristics
2.0
1.6
1.2
0.8
0
4
8
12
16
20
Pulse Test
0.4
Drain
Current
I
D
(A)
VGS = 3.5 V
6 V
Drain to Source Voltage VDS (V)
4 V
4.5 V
10 V
5 V
15 V
Typical Transfer Characteristics
1.6
1.2
0.8
0.4
0
24
6
8
10
Gate to Source Voltage VGS (V)
2.0
Drain
Current
I
D
(A)
VDS = 20 V
Pulse Test
–25
°C
TC = 25°C
75
°C
20
16
12
8
4
0
4
8
12
16
20
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
1 A
ID = 0.5 A
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
Pulse Test
2 A
100
50
20
10
1
0.1
0.2
0.5
1.0
5
Drain Current ID (A)
0.05
Static Drain to Source on State
Resistance vs. Drain Current
Pulse Test
15 V
VGS = 10 V
2
5
2
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
100
s
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK1153 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET
2SK1153(E) 制造商:Renesas Electronics Corporation 功能描述:
2SK1153-E 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET
2SK1154 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET