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參數(shù)資料
| 型號(hào)： | 2SJ660-TL |
| 廠商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 26 A, 60 V, 0.094 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SMP-FD, 3 PIN |
| 文件頁(yè)數(shù)： | 4/4頁(yè) |
| 文件大?。?/td> | 39K |
| 代理商： | 2SJ660-TL |
2SJ660
No.8585-4/4
PS
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of November, 2005. Specifications and information herein are subject
to change without notice.
PD -- Tc
A S O
VGS -- Qg
PD -- Ta
Total Gate Charge, Qg -- nC
Gate-to-Source
V
oltage,
V
GS
--
V
Drain-to-Source Voltage, VDS -- V
Drain
Current,
I
D
--
A
Case Temperature, Tc --
°C
Allowable
Power
Dissipation,
P
D
--
W
Ambient Temperature, Ta --
°C
Allowable
Power
Dissipation,
P
D
--
W
--0.1
2
3
--1.0
7
5
3
--10
7
5
2
3
--100
7
5
2
3
2
--1.0
--10
23
5
7
--0.1
23
5
7
--100
23
5
7
IT08746
IT08745
0
10
20
30
40
50
0
--2
--4
--6
--8
--9
--1
--3
--5
--7
--10
VDS= --30V
ID= --26A
IT08747
0
20
40
60
80
100
120
140
160
10
20
30
40
50
60
IDP= --104A
ID= --26A
100
s
1ms
10ms
100ms
DC
operation
Operation in
this area is
limited by RDS(on).
10
s
IT08735
0
20
40
60
80
100
120
1.65
140
160
0.5
1.0
1.5
2.0
≤10s
Tc=25
°C
Single pulse
Note on usage : Since the 2SJ660 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
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