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參數(shù)資料
| 型號： | 2SJ628 |
| 英文描述： | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 30K |
| 代理商： | 2SJ628 |
2SJ628
No.7271-1/4
Features
Low ON-resistance.
Ultrahigh-speed switching.
1.8V drive.
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VDSS
VGSS
ID
IDP
Conditions
Ratings
Unit
V
V
A
A
W
W
°
C
°
C
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
--12
±
8
--2.5
--10
1.0
3.5
150
PW
≤
10
μ
s, duty cycle
≤
1%
Mounted on a ceramic board (250mm
2
0.8mm)
Tc=25
°
C
Allowable Power Dissipation
PD
Channel Temperature
Storage Temperature
Tch
Tstg
--55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
ID=--1mA, VGS=0
VDS=--12V, VGS=0
VGS=
±
6.4V, VDS=0
VDS=--6V, ID=--1mA
VDS=--6V, ID=--1.3A
ID=--1.3A, VGS=--4.5V
ID=--0.7A, VGS=--2.5V
ID=--0.2A, VGS=--1.8V
--12
V
μ
A
μ
A
V
S
m
m
m
--10
±
10
--1.0
--0.3
2.1
3.0
120
170
230
155
240
360
Static Drain-to-Source On-State Resistance
Marking : MB
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7271
2SJ628
Package Dimensions
unit : mm
2062A
[2SJ628]
72502 TS IM TA-100054
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
P-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
1 : Gate
2 : Drain
3 : Source
SANYO : PCP
4.5
1.6
0.5
0.4
1.5
1
2
4
3.0
1.5
0.4
0.75
3
2
1
(Bottom view)
Preliminary
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