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參數(shù)資料
| 型號(hào)： | 2SJ620 |
| 元件分類： | JFETs |
| 英文描述： | 18 A, 100 V, 0.12 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-9F1B, SC-97, 4 PIN |
| 文件頁(yè)數(shù)： | 5/6頁(yè) |
| 文件大?。?/td> | 201K |
| 代理商： | 2SJ620 |
2SJ620
2004-07-06
5
rth tw
Safe operating area
EAS – Tch
Drain-source voltage VDS (V)
Pulse width tw (S)
Channel temperature (initial) Tch (°C)
Nor
m
ali
zed
t
ra
nsie
n
tt
he
rm
al
im
pe
da
n
ce
r th
(
t)
/R
th
(
ch-
a)
A
val
anc
he
en
er
gy
E
AS
(
m
J)
D
rain
cu
rre
nt
I D
(A)
0
25
200
400
600
1000
800
50
75
100
125
150
10
100
1m
10m
100m
1
10
0.01
0.03
0.1
1
10
Single pulse
0.01
0.02
0.05
0.1
0.2
Duty
= 0.5
T
PDM
t
Duty
= t/T
Rth (ch-c) = 1.0°C/W
0.3
3
0.1
1
10
100
1000
10
100
1000
*: Single nonrepetitive pulse
Tc
= 25°C
Curves must be derated
linearly with increase in
temperature.
ID max (continuous)
ID max (pulsed) *
100
s *
DC operation
Tc
= 25°C
1 ms *
VDSS max
1
15 V
Test circuit
Wave form
IAR
BVDSS
VDD
VDS
RG = 25
VDD = 50 V, L = 3.56 mH
=
VDD
BVDSS
2
I
L
2
1
ΕAS
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