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參數(shù)資料
| 型號(hào)： | 2SJ620 |
| 元件分類： | JFETs |
| 英文描述： | 18 A, 100 V, 0.12 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-9F1B, SC-97, 4 PIN |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大小： | 201K |
| 代理商： | 2SJ620 |
2SJ620
2004-07-06
3
Fo
rw
ar
dt
ra
ns
fe
r
a
d
m
ittanc
e
Y
fs
(
S
)
Drai
n
-s
o
urc
e
vo
lta
ge
V
DS
(V)
Drain-source voltage VDS (V)
ID – VDS
D
ra
in
cu
rr
en
t
I
D
(A
)
Drain-source voltage VDS (V)
ID – VDS
Dr
ai
n
cu
rr
en
t
I
D
(
A
)
Gate-source voltage VGS (V)
ID – VGS
D
rain
cu
rre
nt
I
D
(A)
Gate-source voltage VGS (V)
VDS – VGS
Drain current ID (A)
Yfs ID
Drain current ID (A)
RDS (ON) ID
Drain
-so
urc
eon
resis
ta
n
ce
R
DS
(ON)
(
)
0
50
10
30
20
40
VGS = 2.5 V
Common source
Tc
= 25°C
pulse test
0
4
8
12
16
20
8
3
10
6
3.5
4
5
4.5
0
20
4
12
8
16
Common source
Tc
= 25°C
pulse test
VGS = 2 V
3
10
6
2.5
8
4
0
0.4
0.8
1.2
1.6
2.0
3.5
4.5
0
2
3
4
5
1
0
20
4
12
8
16
Common source
VDS = 10 V
pulse test
Tc
= 55°C
25
100
0
0.5
2.0
1.0
3.0
0
8
12
16
4
2.5
1.5
2
6
10
14
Common source
Tc
= 25°C
pulse test
ID = 18 A
4.5
9
1
10
3
30
0.03
0.3
0.01
0.1
100
VGS = 4 V
Common source
Tc
= 25°C
Pulse test
10
25
2
1
100
30
10
3
5
10
30
50
3
Tc
= 55°C
100
50
Common source
VDS = 10 V
pulse test
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ620(TE24L,Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET P-CH 60V 5A 4-Pin(2+2Tab) TFP T/R |
| 2SJ620_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon P Channel MOS Type Switching Regulator and DC-DC Converter Applications |
| 2SJ620_09 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Switching Regulator and DC-DC Converter Applications Motor Drive Applications |
| 2SJ621 | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SJ621-T1B | 制造商:Renesas Electronics Corporation 功能描述: |
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