參數(shù)資料
型號(hào): 2SJ610(2-7J1B)
元件分類: JFETs
英文描述: 2 A, 250 V, 2.55 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝: LEAD FREE, 2-7J1B, 3 PIN
文件頁數(shù): 4/6頁
文件大?。?/td> 227K
代理商: 2SJ610(2-7J1B)
2SJ610
2006-11-16
4
0
40
120
160
200
10
30
40
20
80
Drain
po
w
er
diss
ip
a
tion
P
D
(W
)
Gate
th
res
hol
dvol
ta
ge
V
th
(
V
)
Case temperature Tc
(°C)
RDS (ON) – Tc
Drain
-s
o
urc
eO
N
-r
es
is
ta
n
ce
R
DS
(
O
N
)
(
)
Drain-source voltage VDS (V)
IDR – VDS
Drain
re
ve
rs
ec
ur
re
nt
I DR
(
A
)
C
apaci
tanc
e
C
(p
F)
Case temperature Tc
(°C)
Vth – Tc
Case temperature Tc
(°C)
PD – Tc
Gate
-so
ur
ce
vo
ltage
V
GS
(
V
)
Total gate charge Qg (nC)
Dynamic input/output characteristics
D
rai
n
-so
urc
e
vo
lta
ge
V
DS
(V)
Drain-source voltage VDS (V)
Capacitance – VDS
ID = 1 A
2 A
0
80
40
0
40
80
120
160
1
2
3
4
5
Common source
VGS = 10 V
Pulse test
Ciss
Coss
Crss
1000
Common source
VGS = 0 V
f
= 1 MHz
Tc
= 25°C
0.1
100
10
1
10
100
0.3
3
30
0
80
40
0
40
80
120
160
2
3
4
5
1
Common source
VDS = 10 V
ID = 1 mA
Pulse test
50
0
035
300
VDD = 200 V
Common source
ID = 2 A
Tc
= 25°C
Pulse test
200
100
25
15
5
100
VGS
VDS
30
25
20
15
10
5
0
1
0.1
0
0.2
0.4
1.2
10
100
Common source
Tc
= 25°C
Pulse test
0.6
0.8
1.0
1.4
VGS = 10 V
5 V
3 V
0, 1
相關(guān)PDF資料
PDF描述
2SJ613 6 A, 20 V, 0.069 ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ615 2500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SJ615 2500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SJ621 3500 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SJ621-A 3500 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SJ612 制造商:未知廠家 制造商全稱:未知廠家 功能描述:
2SJ612-TD-E 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET P CH 20V 2.5A SOT89
2SJ613 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications
2SJ613-TD-E 制造商:SANYO 功能描述:Pch -20V -6A 69m@4V PCP(SC62) Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET P CH 20V 6A SOT89
2SJ615 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications