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參數(shù)資料
| 型號： | 2SJ610(2-7J1B) |
| 元件分類： | JFETs |
| 英文描述： | 2 A, 250 V, 2.55 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-7J1B, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 227K |
| 代理商： | 2SJ610(2-7J1B) |
2SJ610
2006-11-16
2
Electrical Characteristics (Ta
= 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
±10
A
Drain cutoff current
IDSS
VDS = 250 V, VGS = 0 V
100
A
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
250
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
1.5
3.5
V
Drain-source ON-resistance
RDS (ON)
VGS = 10 V, ID = 1.0 A
1.85
2.55
Forward transfer admittance
Yfs
VDS = 10 V, ID = 1.0 A
0.5
1.8
S
Input capacitance
Ciss
381
Reverse transfer capacitance
Crss
52
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
157
pF
Rise time
tr
5
Turn-on time
ton
20
Fall time
tf
6
Switching time
Turn-off time
toff
36
ns
Total gate charge
Qg
24
Gate-source charge
Qgs
11
Gate-drain charge
Qgd
VDD 200 V, VGS = 10 V,
ID = 2.0 A
13
nC
Source-Drain Ratings and Characteristics (Ta
= 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
IDR
2.0
A
Pulse drain reverse current
(Note 1)
IDRP
4.0
A
Forward voltage (diode)
VDSF
IDR = 2.0 A, VGS = 0 V
2.0
V
Reverse recovery time
trr
120
ns
Reverse recovery charge
Qrr
IDR = 2.0 A, VGS = 0 V,
dIDR/dt = 100 A/s
540
nC
Marking
Duty <= 1%, tw = 10 s
0 V
10 V
VGS
RL = 100
VDD 100 V
ID = 1.0 A VOUT
50
J610
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
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