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參數(shù)資料
| 型號(hào)： | 2SJ581-AZ |
| 元件分類： | JFETs |
| 英文描述： | 12 A, 60 V, 0.185 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MP-10, ISOLATED TO-220, 3 PIN |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大小： | 38K |
| 代理商： | 2SJ581-AZ |
Preliminary Product Information D14113EJ1V0PM00
3
2SJ581
PACKAGE DRAWING (Unit : mm)
MP-10 (Isolated TO-220 class Package
EQUIVALENT CIRCUIT
for Automatically Assembling)
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding the
rated voltage may be applied to this device.
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
1
3
2
1.Gate
2.Drain
3.Source
13.0±0.2
2.5±0.2
1.4±0.2
8.0±0.2
4.5±0.2
0.5±0.1
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相關(guān)代理商/技術(shù)參數(shù) |
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| 2SJ583 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SJ583LS | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SJ584LS | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SJ585LS | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET P CH 250V 6.5A TO-220FI |
| 2SJ586 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Switching |
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