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參數(shù)資料
| 型號： | 2SJ581-AZ |
| 元件分類： | JFETs |
| 英文描述： | 12 A, 60 V, 0.185 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MP-10, ISOLATED TO-220, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 38K |
| 代理商： | 2SJ581-AZ |
Preliminary Product Information D14113EJ1V0PM00
2
2SJ581
ELECTRICAL CHARACTERISTICS(TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain Leakage Current
IDSS
VDS =
60 V, VGS = 0 V
10
A
Gate Leakage Current
IGSS
VGS = ±10 V, VDS = 0 V
±10
A
Gate Cut-off Voltage
VGS(off)
VDS =
10 V, ID = 1.0 mA
1.0
2.0
V
Forward Transfer Admittance
| yfs |VDS =
10 V, ID = 6 A
5.0
S
RDS(on)1
VGS =
10 V, ID = 6 A
70
100
m
Drain to Source On-state Resistance
RDS(on)2
VGS =
4 V, ID = 6 A
120
185
m
Input Capacitance
Ciss
1210
pF
Output Capacitance
Coss
520
pF
Reverse Transfer Capacitance
Crss
VDS =
10 V, VGS = 0 V, f = 1 MHz
180
pF
Turn-on Delay Time
td(on)
15
ns
Rise Time
tr
130
ns
Turn-off Delay Time
td(off)
95
ns
Fall Time
tf
ID =
6 A, VGS(on) = 10 V,
VDD =
30 V,
RG = 10
80
ns
Total Gate Charge
QG
42
nC
Gate to Source Charge
QGS
8.0
nC
Gate to Drain Charge
QGD
ID =
12 A, VDD = 48 V,
VGS(on) =
10 V
10
nC
Diode Forward Voltage
VF(S-D)
IF =
12 A, VGS = 0 V
1.0
V
Reverse Recovery Time
trr
120
ns
Reverse Recovery Charge
Qrr
IF =
12 A, VGS = 0 V,
di/dt = 100 A/
s
230
nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
PG.
RG
0
VGS(
)
D.U.T.
RL
VDD
τ = 1 s
Duty Cycle
≤ 1 %
VGS
Wave Form
ID
Wave Form
VGS
(
)
10 %
90 %
VGS(on)
10 %
0
ID(
)
90 %
td(on)
tr
td(off)
tf
10 %
τ
RG = 10
ID
0
ton
toff
PG.
50
D.U.T.
RL
VDD
IG =
2 mA
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