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參數(shù)資料
| 型號(hào)： | 2SJ556 |
| 元件分類： | JFETs |
| 英文描述： | 0.055 ohm, POWER, FET |
| 封裝： | TO-3PFM, 3 PIN |
| 文件頁(yè)數(shù)： | 2/9頁(yè) |
| 文件大?。?/td> | 106K |
| 代理商： | 2SJ556 |
2SJ556
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
–60
V
Gate to source voltage
V
GSS
±20
V
Drain current
I
D
–45
A
Drain peak current
I
D(pulse)
Note1
–180
A
Body-drain diode reverse drain current
I
DR
–45
A
Avalanche current
I
AP
Note3
–45
A
Avalanche energy
E
AR
Note3
173
mJ
Channel dissipation
Pch
Note2
60
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. PW
≤ 10s, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg
≥ 50
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
–60
—
V
I
D = –10mA, VGS = 0
Gate to source breakdown voltage V
(BR)GSS
±20
—
V
I
G = ±100A, VDS = 0
Zero gate voltege drain current
I
DSS
—
–10
A
V
DS = –60 V, VGS = 0
Gate to source leak current
I
GSS
—
±10
A
V
GS = ±16V, VDS = 0
Gate to source cutoff voltage
V
GS(off)
–1.0
—
–2.0
V
I
D = –1mA, VDS = –10V
Static drain to source on state
R
DS(on)
—
0.028
0.037
I
D = –25A, VGS = –10V
Note4
resistance
R
DS(on)
—
0.038
0.055
I
D = –25A, VGS = –4V
Note4
Forward transfer admittance
|y
fs|
18
30
—
S
I
D = –25A, VDS = –10V
Note4
Input capacitance
Ciss
—
2500
—
pF
V
DS = –10V
Output capacitance
Coss
—
1300
—
pF
V
GS = 0
Reverse transfer capacitance
Crss
—
300
—
pF
f = 1MHz
Turn-on delay time
t
d(on)
—
25
—
ns
V
GS = –10V, ID = –25A
Rise time
t
r
—
160
—
ns
R
L = 1.2
Turn-off delay time
t
d(off)
—
350
—
ns
Fall time
t
f
—
240
—
ns
Body–drain diode forward voltage
V
DF
—
–1.1
—
V
I
F = –45A, VGS = 0
Body–drain diode reverse
recovery time
t
rr
—
100
—
ns
I
F = –45A, VGS = 0
diF/ dt =50A/s
Note:
4. Pulse test
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