參數(shù)資料
型號: 2SJ551S-E
元件分類: JFETs
英文描述: 18 A, 60 V, 0.11 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝: LDPAK-3
文件頁數(shù): 8/12頁
文件大小: 79K
代理商: 2SJ551S-E
2SJ551(L),2SJ551(S)
3
Electrical Characteristics (Ta = 25
°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
–60
V
I
D = –10mA, VGS = 0
Gate to source breakdown voltage V
(BR)GSS
±20
——V
I
G = ±100A, VDS = 0
Zero gate voltege drain current
I
DSS
–10
AV
DS = –60 V, VGS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±16V, VDS = 0
Gate to source cutoff voltage
V
GS(off)
–1.0
–2.0
V
I
D = –1mA, VDS = –10V
Static drain to source on state
R
DS(on)
0.050
0.065
I
D = –9A, VGS = –10V
Note4
resistance
R
DS(on)
0.070
0.110
I
D = –9A, VGS = –4V
Note4
Forward transfer admittance
|y
fs|
1016—
S
I
D = –9A, VDS = -10V
Note4
Input capacitance
Ciss
1300
pF
V
DS = –10V
Output capacitance
Coss
650
pF
V
GS = 0
Reverse transfer capacitance
Crss
180
pF
f = 1MHz
Turn-on delay time
t
d(on)
14
ns
V
GS = –10V, ID = –9A
Rise time
t
r
95
ns
R
L =3.33
Turn-off delay time
t
d(off)
190
ns
Fall time
t
f
135
ns
Body–drain diode forward voltage
V
DF
–1.0
V
I
F = –18A, VGS = 0
Body–drain diode reverse
recovery time
t
rr
70
ns
I
F = –18A, VGS = 0
diF/ dt =50A/
s
Note:
4. Pulse test
相關(guān)PDF資料
PDF描述
2SJ551S 18 A, 60 V, 0.11 ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ551STL-E 18 A, 60 V, 0.11 ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ552(S) 20 A, 60 V, 0.095 ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ552L 20 A, 60 V, 0.095 ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ552S 20 A, 60 V, 0.095 ohm, P-CHANNEL, Si, POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SJ551STL-E 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET
2SJ552 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Power Switching
2SJ552(L) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 20A I(D) | TO-262AA
2SJ552(S) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 20A I(D) | TO-263AB