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參數資料
| 型號： | 2SJ529S |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P Channel MOS FET(P溝道MOSFET) |
| 中文描述： | 硅P通道MOS FET的性（P溝道MOSFET的） |
| 文件頁數： | 3/10頁 |
| 文件大?。?/td> | 72K |
| 代理商： | 2SJ529S |
2SJ529(L),2SJ529(S)
3
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V
(BR)DSS
V
(BR)GSS
I
DSS
I
GSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
–60
—
—
V
I
D
= –10mA, V
GS
= 0
I
G
=
±
100
μ
A, V
DS
= 0
V
DS
= –60 V, V
GS
= 0
V
GS
=
±
16V, V
DS
= 0
I
D
= –1mA, V
DS
= –10V
I
D
= –5A, V
GS
= –10V
Note4
I
D
= –5A, V
GS
= –4V
Note4
I
D
= –5A, V
DS
= –10V
Note4
V
DS
= –10V
V
GS
= 0
f = 1MHz
Gate to source breakdown voltage
±
20
—
—
V
Zero gate voltege drain current
—
—
–10
μ
A
μ
A
Gate to source leak current
—
—
±
10
Gate to source cutoff voltage
–1.0
—
–2.0
V
Static drain to source on state
—
0.12
0.16
resistance
—
0.17
0.24
Forward transfer admittance
4.5
7.5
—
S
Input capacitance
—
580
—
pF
Output capacitance
Coss
—
300
—
pF
Reverse transfer capacitance
Crss
—
85
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
—
10
—
ns
V
GS
= –10V, I
D
= –5A
R
L
= 6
Rise time
—
40
—
ns
Turn-off delay time
—
85
—
ns
Fall time
—
60
—
ns
Body–drain diode forward voltage
—
–1.2
—
V
I
F
= –10A, V
GS
= 0
I
= –10A, V
= 0
diF/ dt = 50A/
μ
s
Body–drain diode reverse
recovery time
Note:
4. Pulse test
—
60
—
ns
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SJ529S-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 10A 3-Pin(2+Tab) DPAK(S) Bulk |
| 2SJ529STL-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ529STR-E | 制造商:Renesas Electronics Corporation 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:0 |
| 2SJ530 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
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