參數(shù)資料
型號(hào): 2SJ529S
廠商: Hitachi,Ltd.
英文描述: Silicon P Channel MOS FET(P溝道MOSFET)
中文描述: 硅P通道MOS FET的性(P溝道MOSFET的)
文件頁數(shù): 2/10頁
文件大小: 72K
代理商: 2SJ529S
2SJ529(L),2SJ529(S)
2
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
I
AP
E
AR
Pch
Note2
–60
V
Gate to source voltage
±
20
V
Drain current
–10
A
Drain peak current
Note1
–40
A
Body-drain diode reverse drain current
–10
A
Avalenche current
Note3
–10
A
Avalenche energy
Note3
8.5
mJ
Channel dissipation
20
W
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Note:
1. PW
10
μ
s, duty cycle
1 %
2. Value at Tc = 25
°
C
3. Value at Tch = 25
°
C, Rg
50
Tstg
–55 to +150
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