參數(shù)資料
型號(hào): 2SJ526
元件分類: JFETs
英文描述: 0.23 ohm, POWER, FET
封裝: TO-220FM, 3 PIN
文件頁(yè)數(shù): 7/10頁(yè)
文件大?。?/td> 51K
代理商: 2SJ526
2SJ526
6
0
–20
–40
–60
–80
0
–4
–8
–12
–16
–20
–100
816
24
32
40
1000
100
300
30
3
10
1
–0.1 –0.2
–0.5 –1
–2
–5
–10
DS
V
GS
V
= –50 V
–25 V
–10 V
DD
D
I
= –10 A
V
= –10 V
–25 V
–50 V
DD
t f
r
t
d(off)
t
d(on)
t
DD
V
= –10 V, V
= –30 V
Pw = 5 s, duty < 1 %
GS
Gate Charge
Qg (nc)
Drain
to
Source
Voltage
V
(V)
DS
Gate
to
Source
Voltage
V
(V)
GS
Dynamic Input Characteristics
Drain Current
I
(A)
D
Switching
Time
t
(ns)
Switching Characteristics
500
200
100
20
50
10
5
–0.1 –0.2
–1
–5
–10
0
–10
–20
–30
–40
–50
2000
1000
500
200
100
50
–0.5
–2
di / dt = 50 A / s
V
= 0, Ta = 25 °C
GS
20
10
V
= 0
f = 1 MHz
GS
Ciss
Coss
Crss
Reverse Drain Current
I
(A)
DR
Reverse
Recovery
Time
trr
(ns)
Body–Drain Diode Reverse
Recovery Time
Capacitance
C
(pF)
Drain to Source Voltage V
(V)
DS
Typical Capacitance vs.
Drain to Source Voltage
相關(guān)PDF資料
PDF描述
2SJ527STL-E 5 A, 60 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ530STL-E 15 A, 60 V, 0.16 ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ533-E 30 A, 60 V, 0.055 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SJ534-E 18 A, 60 V, 0.11 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SJ534 0.11 ohm, POWER, FET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SJ526-E 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas Electronics Corporation 功能描述:Pch MOSFET,60V,12A,0.11ohm,TO-220FM 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 12A 3-Pin(3+Tab) TO-220FM Box
2SJ527 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET
2SJ527L 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Power Switching
2SJ527-L(E) 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 5A 3-Pin(3+Tab) DPAK(L)-(1) Box