參數(shù)資料
型號： 2SJ526
元件分類： JFETs
英文描述： 0.23 ohm, POWER, FET
封裝： TO-220FM, 3 PIN
文件頁數(shù)： 6/10頁
文件大小： 51K
代理商： 2SJ526
2SJ526
5
–1.0
–0.8
–0.6
–0.4
–0.2
0
–4
–8
–12
–16
–20
0.5
0.4
0.3
0.2
0.1
–40
0
40
80
120
160
0
–10 V
I
= –5 A
D
GS
V
= –4 V
–0.1
–1
–10
0.1
10
20
5
1
0.5
–0.2
–0.5
–2
–5
1
0.5
0.05
0.02
0.01
–0.1
–0.3
–1
–3
–10
–30
–100
–1, –2 A
I
= –5 A
D
–2 A
–1 A
0.2
0.1
–10 V
V
= –4 V
GS
–1 A
–2 A
–5 A
2
75 °C
25 °C
Ta = –25 °C
DS
V
= –10 V
Pulse Test
Gate to Source Voltage
V
(V)
GS
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
(V)
DS(on)
Drain
to
Source
Saturation
Voltage
Drain Current
I
(A)
D
Drain
to
Source
On
State
Resistance
R
(
)
W
DS(on)
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature
Tc
(°C)
R
(
)
DS(on)
Static
Drain
to
Source
on
State
Resistance
W
Static Drain to Source on State Resistance
vs. Temperature
Drain Current I
(A)
D
Forward
Transfer
Admittance
|y
|
(S)
fs
Forward Transfer Admittance vs.
Drain Current
Pulse Test
相關(guān)PDF資料
PDF描述
2SJ527STL-E 5 A, 60 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ530STL-E 15 A, 60 V, 0.16 ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ533-E 30 A, 60 V, 0.055 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SJ534-E 18 A, 60 V, 0.11 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SJ534 0.11 ohm, POWER, FET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SJ526-E 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas Electronics Corporation 功能描述:Pch MOSFET,60V,12A,0.11ohm,TO-220FM 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 12A 3-Pin(3+Tab) TO-220FM Box
2SJ527 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET
2SJ527L 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Power Switching
2SJ527-L(E) 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 5A 3-Pin(3+Tab) DPAK(L)-(1) Box
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