- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄49989 > 2SJ509 1000 mA, 100 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET PDF資料下載
參數(shù)資料
| 型號： | 2SJ509 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 100 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 154K |
| 代理商： | 2SJ509 |
2SJ509
2009-09-29
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
—
±10
μA
Drain cutoff current
IDSS
VDS = 100 V, VGS = 0 V
—
100
μA
Drainsource breakdown
voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
100
—
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
0.8
—
2.0
V
VGS = 4 V, ID = 0.5 A
—
1.68
2.5
Drainsource ON resistance
RDS (ON)
VGS = 10 V, ID = 0.5 A
—
1.34
1.9
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 0.5 A
0.3
0.7
—
S
Input capacitance
Ciss
—
135
—
Reverse transfer capacitance
Crss
—
22
—
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
—
48
—
pF
Rise time
tr
—
20
—
Turnon time
ton
—
32
—
Fall time
tf
—
25
—
Switching time
Turnoff time
toff
—
130
—
ns
Total gate charge (Gatesource
plus gatedrain)
Qg
—
6.3
—
Gatesource charge
Qgs
—
4.1
—
Gatedrain (“miller”) charge
Qgd
VDD ≈ 80 V, VGS = 10 V,
ID = 1 A
—
2.2
—
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
1
A
Pulse drain reverse current
(Note 1)
IDRP
—
3
A
Forward voltage (diode)
VDSF
IDR = 1 A, VGS = 0 V
—
1.5
V
Reverse recovery time
trr
—
90
—
ns
Reverse recovery charge
Qrr
IDR = 1 A, VGS = 0 V
dIDR / dt = 50 A / μs
—
180
—
nC
Marking
J509
Lot No.
Note 4
Part No.
(or abbreviation code)
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ511 | 2000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ511 | 2 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ516 | 6.5 A, 250 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ526 | 0.23 ohm, POWER, FET |
| 2SJ527STL-E | 5 A, 60 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ509_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Chopper Regulator, DC−DC Converter and Motor Drive Applications |
| 2SJ509_09 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Chopper Regulator, DC?DC Converter and Motor Drive |
| 2SJ50-MAG | 制造商:TT Electronics / Semelab 功能描述:MOSFET P-Ch 160V 7A High Speed TO-3 |
| 2SJ511 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:P CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS) |
| 2SJ511_09 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Chopper Regulator, DC−DC Converter and Motor Drive |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。