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參數(shù)資料
| 型號： | 2SJ511 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | LEAD FREE PACKAGE-3 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 837K |
| 代理商： | 2SJ511 |
2SJ511
2006-11-15
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L
2
πMOSV)
2SJ511
Chopper Regulator, DCDC Converter and Motor Drive
Applications
4-V gate drive
Low drainsource ON resistance
: RDS (ON) = 0.32 (typ.)
High forward transfer admittance
: |Yfs| = 1.4 S (typ.)
Low leakage current : IDSS = 100 A (max) (VDS = 30 V)
Enhancement mode
: Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
30
V
Draingate voltage (RGS = 20 k)
VDGR
30
V
Gatesource voltage
VGSS
±20
V
DC
(Note 1)
ID
2
A
Drain current
Pulse (Note 1)
IDP
6
A
Drain power dissipation
PD
0.5
W
Drain power dissipation
(Note 2)
PD
1.5
W
Single pulse avalanche energy
(Note 3)
EAS
55
mJ
Avalanche current
IAR
2
A
Repetitive avalanche energy (Note 4)
EAR
0.05
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to
ambient
Rth (cha)
250
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: Mounted on a ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm)
Note 3: VDD = 25 V, Tch = 25°C (initial), L = 10 mH, RG = 25 , IAR = 2 A
Note 4: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
25K1B
Weight: 0.05 g (typ.)
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