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參數(shù)資料
| 型號： | 2SJ506 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅P通道MOS FET的高速電源開關 |
| 文件頁數(shù)： | 6/10頁 |
| 文件大?。?/td> | 50K |
| 代理商： | 2SJ506 |
2SJ506(L), 2SJ506(S)
6
100
50
20
10
–0.1 –0.2
–1
0
–10
–20
–30
–40
–50
200
100
50
1000
200
500
100
10
20
5
–0.1–0.2
–1 –2
–5
–0.5
–5
20
10
–10
500
–20
–50
–2
1000
2000
5000
Ciss
Coss
Crss
V = 0
f = 1 MHz
–20
0
–10
–20
–30
–40
0
0
–4
–8
–12
–16
–20
40
–50
8
16
24
32
DS
V
GS
V
V = –25 V
–10 V
–5 V
V = –5 V
–10 V
–25 V
I = –10 A
50
–0.5
Drain Current I (A)
–10
r
d(off)
t
tf
d(on)
t
V = –10 V, V = –10 V
PW = 10
μ
s, duty =
di / dt = 50 A /
μ
s
V = 0, Ta = 25
°
C
Body to Drain Diode Reverse
Recovery Time
Reverse Drain Current I (A)
R
C
Drain to Source Voltage V (V)
Typical Capacitance vs.
Drain to Source Voltage
Dynamic Input Characteristics
Gate Charge Qg (nc)
D
D
G
G
S
Switching Characteristics
相關PDF資料 |
PDF描述 |
|---|---|
| 2SJ506L | Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ506S | Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ518 | Silicon P Channel MOS FET(P溝道MOSFET) |
| 2SJ520TP | TRANSISTOR | MOSFET | P-CHANNEL | 20V V(BR)DSS | 10A I(D) | TO-251VAR |
| 2SJ520TP-FA | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ506L | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ506L-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ506S | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:Hight Speed Power Switching |
| 2SJ506S-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 30V 10A 3-Pin(2+Tab) DPAK(S)-(2) 制造商:Renesas 功能描述:Trans MOSFET P-CH 30V 10A 3-Pin(2+Tab) DPAK(S)-(2) |
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