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參數(shù)資料
| 型號： | 2SJ506 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅P通道MOS FET的高速電源開關(guān) |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 50K |
| 代理商： | 2SJ506 |
2SJ506(L), 2SJ506(S)
4
Main Characteristics
40
30
20
10
0
50
100
150
200
–20
–16
–12
–8
–4
0
–4
–8
–12
–16
–20
–4 V
0
–1
–2
–3
–4
–5
–3 V
–20
–16
–12
–8
–4
–3.5 V
V = –10 V
Pulse Test
–10 V
Tc = –25
°
C
Pulse Test
V = –2.5 V
75
°
C
–5 V
–6 V
–4.5 V
25
°
C
–8 V
–500
–200
–100
–50
–20
–10
–5
–0.1
–2
–1
–10
–0.1–0.2
–0.5 –1
–2
–5
–0.2
–0.5
–20
–50
Ta = 25
°
C
1ms
10
μ
s
100
DCOpeaion
(Tc=25
°
C
C
Case Temperature Tc (
°
C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
D
D
Maximum Safe Operation Area
Operation in
this area is
limited by R
DS(on)
D
D
Typical Output Characteristics
Drain to Source Voltage V (V)
Gate to Source Voltage V (V)
Typical Transfer Characteristics
D
D
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ506L | Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ506S | Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ518 | Silicon P Channel MOS FET(P溝道MOSFET) |
| 2SJ520TP | TRANSISTOR | MOSFET | P-CHANNEL | 20V V(BR)DSS | 10A I(D) | TO-251VAR |
| 2SJ520TP-FA | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ506L | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ506L-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ506S | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:Hight Speed Power Switching |
| 2SJ506S-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 30V 10A 3-Pin(2+Tab) DPAK(S)-(2) 制造商:Renesas 功能描述:Trans MOSFET P-CH 30V 10A 3-Pin(2+Tab) DPAK(S)-(2) |
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