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參數(shù)資料
| 型號(hào)： | 2SJ496 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P-Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅P溝道場(chǎng)效應(yīng)晶體管高速電源開關(guān) |
| 文件頁數(shù)： | 6/10頁 |
| 文件大?。?/td> | 50K |
| 代理商： | 2SJ496 |
2SJ496
6
500
200
100
20
50
10
5
–0.1 –0.2
Reverse Drain Current I (A)
–1
–5
–10
0
–10
–20
–30
–40
–50
2000
1000
500
200
100
50
0
–20
–40
–60
–80
0
0
–4
–8
–12
–16
–20
40
–100
8
16
24
32
1000
100
300
30
3
10
1
–0.1 –0.2
–0.5 –1
Drain Current I (A)
–2
–5
–10
–0.5
–2
di / dt = 50 A /
μ
s
V = 0, Ta = 25
°
C
20
10
V = 0
f = 1 MHz
Ciss
Crss
Coss
DS
V
GS
V
V = –50 V
–25 V
–10 V
I = –5 A
V = –10 V
–25 V
–50 V
tf
r
d(off)
t
d(on)
t
V = –10 V, V = –30 V
Pw = 5
μ
s, duty < 1 %
R
Body to Drain Diode Reverse
Recovery Time
C
Drain to Source Voltage V (V)
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nc)
D
D
G
G
Dynamic Input Characteristics
S
Switching Characteristics
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PDF描述 |
|---|---|
| 2SJ501 | Ultrahigh-Speed Switching Applications |
| 2SJ502 | Ultrahigh-Speed Switching Applications |
| 2SJ503 | DC/DC Converter Applications |
| 2SJ503TP | TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 4A I(D) | TO-251VAR |
| 2SJ503TP-FA | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ496_11 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ496TZ-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 5A 3-Pin TO-92 Mod T/R |
| 2SJ498 | 制造商:ISAHAYA 制造商全稱:Isahaya Electronics Corporation 功能描述:FIELD-EFFECT TRANSISTOR |
| 2SJ499 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Load Switching Applications |
| 2SJ50 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:LOW FREQUENCY POWER AMPLIFIER |
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