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參數(shù)資料
| 型號(hào)： | 2SJ496 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P-Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅P溝道場(chǎng)效應(yīng)晶體管高速電源開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 5/10頁(yè) |
| 文件大?。?/td> | 50K |
| 代理商： | 2SJ496 |
2SJ496
5
–1.0
–0.8
–0.6
–0.4
–0.2
0
–4
–8
–12
–16
–20
0.5
0.4
0.3
0.2
0.1
–40
0
40
80
120
160
0
–10 V
I = –5 A
V = –4 V
–0.1
–1
–10
0.1
10
20
5
1
0.5
–0.2
–0.5
–2
–5
1
0.5
0.05
0.02
0.01
–0.1
–0.3
–1
–3
–10
–30
–100
–1, –2 A
I = –5 A
–2 A
–1 A
0.2
0.1
–10 V
V = –4 V
–1 A
–2 A
–5 A
2
75
°
C
25
°
C
Ta = –25
°
C
V = –10 V
Pulse Test
Gate to Source Voltage V (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
D
D
Drain Current I (A)
D
R
D
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature Tc (
°
C)
R
D
S
Static Drain to Source on State Resistance
vs. Temperature
Drain Current I (A)
F
f
Forward Transfer Admittance vs.
Drain Current
Pulse Test
Pulse Test
Pulse Test
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ501 | Ultrahigh-Speed Switching Applications |
| 2SJ502 | Ultrahigh-Speed Switching Applications |
| 2SJ503 | DC/DC Converter Applications |
| 2SJ503TP | TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 4A I(D) | TO-251VAR |
| 2SJ503TP-FA | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ496_11 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ496TZ-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 5A 3-Pin TO-92 Mod T/R |
| 2SJ498 | 制造商:ISAHAYA 制造商全稱:Isahaya Electronics Corporation 功能描述:FIELD-EFFECT TRANSISTOR |
| 2SJ499 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Load Switching Applications |
| 2SJ50 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:LOW FREQUENCY POWER AMPLIFIER |
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