- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄33474 > 2SJ483TZ-E 5000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SJ483TZ-E |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 5000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SC-51, TO-92MOD, 3 PIN |
| 文件頁(yè)數(shù)： | 3/7頁(yè) |
| 文件大?。?/td> | 77K |
| 代理商： | 2SJ483TZ-E |
2SJ483
Rev.2.00 Sep 07, 2005 page 3 of 6
Main Characteristics
Channel
Dissipation
Pch
(W)
Ambient Temperature
Ta (°C)
Power vs. Temperature Derating
Drain to Source Voltage
VDS (V)
Drain
Current
I
D
(A)
Typical Output Characteristics
Gate to Source Voltage
VGS (V)
Drain
Current
I
D
(A)
Typical Transfer Characteristics
–10
0
–2
–4
–6
–8
0–2
–4
–6
–8
–10
0
–2
–4
–6
–8
0
–1–2–3–4–5
Tc = 75°C
1.6
0
0.4
0.8
1.2
0
50
100
150
200
VDS = –10 V
Pulse Test
–10 V –6 V
–5 V
–4 V
–3 V
–3.5 V
VGS = –2.5 V
Ta = 25°C
Pulse Test
Ta = 25°C
Pulse Test
Ta = 25°C
Pulse Test
Drain to Source Voltage
VDS (V)
Drain
Current
I
D
(A)
Maximum Safe Operation Area
–30
–10
–1
–3
–0.1
–0.03
–0.3
–0.01
–0.01 –0.03 –0.1 –0.3 –1
–3
–10 –30 –100
–100
Ta = 25°C
PW
=
10
ms
(1
shot)
DC
Operation
1 ms
10
s 100 s
Operation in
this area is
limited by RDS (on)
Gate to Source Voltage
VGS (V)
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–1.0
0
–0.2
–0.4
–0.6
–0.8
0
–4
–8
–12
–16
–20
ID = –5 A
–2 A
–1 A
Drain Current
ID (A)
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
Static Drain to Source on State Resistance
vs. Drain Current
1
0.3
0.1
0.03
0.01
–0.3
–10
–30
–0.1
–3
–1
–100
10
3
VGS = –4 V
–10 V
–25°C
25°C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ483 | SMALL SIGNAL, FET |
| 2SJ484WYTL-E | 2000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ485(TP-FA) | 4000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ486ZU-TR-E | 300 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ491-4072 | 20 A, 30 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ484 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ484WY(TL-E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ484WYTL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ484WYTR-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ485 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。