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參數(shù)資料
| 型號： | 2SJ483TZ-E |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 5000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SC-51, TO-92MOD, 3 PIN |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 77K |
| 代理商： | 2SJ483TZ-E |
2SJ483
Rev.2.00 Sep 07, 2005 page 2 of 6
Absolute Maximum Ratings
(Ta = 25
°C)
Item
Symbol
Value
Unit
Drain to source voltage
VDSS
–30
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
–5
A
Drain peak current
ID (pulse)
Note 1
–20
A
Body to drain diode reverse drain current
IDR
–5
A
Channel dissipation
Pch
0.9
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. PW
≤ 10 s, duty cycle ≤ 1%
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V (BR) DSS
–30
—
V
ID = –10 mA, VGS = 0
Gate to source breakdown voltage
V (BR) GSS
±20
—
V
IG =
±100 A, VDS = 0
Zero gate voltage drain current
IDSS
—
–10
A
VDS = –30 V, VGS = 0
Gate to source leak current
IGSS
—
±10
A
VGS =
±16 V, VDS = 0
Gate to source cutoff voltage
VGS (off)
–1.0
—
–2.0
V
ID = –1 mA, VDS = –10 V
RDS (on)
—
0.08
0.11
ID = –2.5 A, VGS = –10 V
Note 2
Static drain to source on state resistance
RDS (on)
—
0.12
0.17
ID = –2.5 A, VGS = –4 V
Note 2
Forward transfer admittance
|yfs|
3
5
—
S
ID = –2.5 A, VDS = –10 V
Note 2
Input capacitance
Ciss
—
630
—
pF
Output capacitance
Coss
—
390
—
pF
Reverse transfer capacitance
Crss
—
135
—
pF
VDS = –10 V
VGS = 0
f = 1 MHz
Turn-on delay time
td (on)
—
15
—
ns
Rise time
tr
—
70
—
ns
Turn-off delay time
td (off)
—
65
—
ns
Fall time
tf
—
60
—
ns
VGS = –10 V
ID = –2.5 A
RL = 4
Body to drain diode forward voltage
VDF
—
–1.0
—
V
IF = –5 A, VGS = 0
Body to drain diode reverse recovery time
trr
—
60
—
ns
IF = –5 A, VGS = 0
diF/dt = 20 A/
s
Note:
2. Pulse test
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|---|---|
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ484 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ484WY(TL-E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ484WYTL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ484WYTR-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ485 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
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