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參數(shù)資料
| 型號(hào)： | 2SJ483 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅P通道MOS FET的高速電源開關(guān) |
| 文件頁數(shù)： | 4/9頁 |
| 文件大小： | 43K |
| 代理商： | 2SJ483 |
2SJ483
4
Main Characteristics
1.6
1.2
0.8
0.4
0
50
100
150
200
–10
–3
–1
–0.3
–0.1
–0.03
–0.01
–0.01–0.03 –0.1 –0.3
Drain to Source Voltage V (V)
–1
–3
–10
–10
–8
–6
–4
–2
0
–2
–4
–6
–8
–10
–5 V
–4 V
–3.5 V
0
–1
–2
–3
–4
GS
–5
–30 –100
–100
–30
100
μ
s
DCOpeaion
10
μ
s
–6 V
–10 V
–3 V
V = –2.5 V
Ta = 25
°
C
Pulse Test
–10
–8
–6
–4
–2
–25
°
C
25
°
C
Tc = 75
°
C
Ta = 25
°
C
PW=10ms
C
Ambient Temperature Ta (
°
C)
Power vs. Temperature Derating
D
D
Maximum Safe Operation Area
Drain to Source Voltage V (V)
D
D
Typical Output Characteristics
Gate to Source Voltage V (V)
D
D
Typical Transfer Characteristics
Operation in
this area is
limited by R
DS(on)
V = –10 V
Pulse Test
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ484 | Silicon P-Channel MOS FET High Speed Power Switching |
| 2SJ486 | RELAY-.5AMP-DC-6V/DIODE RoHS Compliant: Yes |
| 2SJ490 | TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 10A I(D) | TO-252 |
| 2SJ491 | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SJ49 | LOW FREQUENCY POWER AMPLIFIER |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ483TZ-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ484 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ484WY(TL-E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ484WYTL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ484WYTR-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
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