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參數(shù)資料
| 型號： | 2SJ483 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅P通道MOS FET的高速電源開關(guān) |
| 文件頁數(shù)： | 3/9頁 |
| 文件大小： | 43K |
| 代理商： | 2SJ483 |
2SJ483
3
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
–30
—
—
V
I
D
= –10mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±
20
—
—
V
I
G
=
±
100
μ
A, V
DS
= 0
Zero gate voltege drain current
I
DSS
I
GSS
V
GS(off)
R
DS(on)
—
—
–10
μ
A
μ
A
V
DS
= –30 V, V
GS
= 0
V
GS
=
±
16V, V
DS
= 0
I
D
= –1mA, V
DS
= –10V
I
D
= –2.5A
V
GS
= –10V*
1
I
D
= –2.5A
V
GS
= –4V*
1
I
D
= –2.5A,
V
DS
= –10V*
1
V
DS
= –10V
V
GS
= 0
f = 1MHz
Gate to source leak current
—
—
±
10
Gate to source cutoff voltage
–1.0
—
–2.0
V
Static drain to source on state
resistance
—
0.08
0.11
R
DS(on)
—
0.12
0.17
Forward transfer admittance
|y
fs
|
3
5
—
S
Input capacitance
Ciss
—
630
—
pF
Output capacitance
Coss
—
390
—
pF
Reverse transfer capacitance
Crss
—
135
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
—
15
—
ns
V
GS
= –10V, I
D
= –2.5A
R
L
= 4
Rise time
—
70
—
ns
Turn-off delay time
—
65
—
ns
Fall time
—
60
—
ns
Body to drain diode forward
voltage
—
–1.0
—
V
I
D
= –5A, V
GS
= 0
Body to drain diode reverse
recovery time
Note:
1. Pulse test
t
rr
—
60
—
ns
I
= –5A, V
= 0
diF/ dt = 20A/
μ
s
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ483TZ-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ484 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ484WY(TL-E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ484WYTL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ484WYTR-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
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