參數(shù)資料
型號(hào): 2SJ479S
廠商: Hitachi,Ltd.
英文描述: Silicon P Channel DV-L MOS FET High Speed Power Switching
中文描述: 硅P通道的DV -蜇場(chǎng)效應(yīng)晶體管高速電源開關(guān)
文件頁數(shù): 2/7頁
文件大?。?/td> 38K
代理商: 2SJ479S
2SJ479(L), 2SJ479(S)
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
Pch
Note2
–30
V
Gate to source voltage
±
20
V
Drain current
–30
A
Drain peak current
Note1
–120
A
Body to drain diode reverse drain current
–30
A
Channel dissipation
50
W
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Notes: 1. PW
10
μ
s, duty cycle
1 %
2. Value at Tc = 25
°
C
Tstg
–55 to +150
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