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參數(shù)資料
| 型號(hào)： | 2SJ471 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P Channel DV-L MOS FET High Speed Power Switching |
| 中文描述： | 硅P通道的DV -蜇場(chǎng)效應(yīng)晶體管高速電源開關(guān) |
| 文件頁(yè)數(shù)： | 6/10頁(yè) |
| 文件大?。?/td> | 47K |
| 代理商： | 2SJ471 |
2SJ471
6
1000
200
500
100
20
5
50
Reverse Drain Current I (A)
R
Body to Drain Diode Reverse
Recovery Time
0
–4
–8
–12
–16
–20
10000
5000
2000
500
200
1000
100
C
Drain to Source Voltage V (V)
Typical Capacitance vs.
Drain to Source Voltage
0
–10
–20
–30
–40
0
0
–4
–8
–12
–16
–20
–50
16
32
48
64
80
V
GS
V
DS
V = –5 V
–10 V
–25 V
V = –25 V
–10 V
–5 V
I = –30 A
Gate Charge Qg (nc)
D
D
G
G
Dynamic Input Characteristics
Drain Current I (A)
S
Switching Characteristics
–0.1
–50
–0.2 –0.5 –1 –2
–5 –10 –20
10
1000
200
500
100
20
5
50
–0.1
–50
–0.2 –0.5 –1 –2
–5 –10 –20
10
di / dt = 50 A /
μ
s
V = 0, Ta = 25
°
C
tf
r
d(on)
t
d(off)
t
V = –10 V, V = –10 V
duty < 1 %
Ciss
Coss
Crss
V = 0
f = 1 MHz
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PDF描述 |
|---|---|
| 2SJ479 | Silicon P Channel DV-L MOS FET High Speed Power Switching |
| 2SJ479L | Silicon P Channel DV-L MOS FET High Speed Power Switching |
| 2SJ479S | Silicon P Channel DV-L MOS FET High Speed Power Switching |
| 2SJ485TP | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SJ485TP-FA | TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 4A I(D) | TO-252VAR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ471(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ471-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel DV-L MOS FET |
| 2SJ472-01 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| 2SJ472-01L | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:Power MOSFET |
| 2SJ472-01L_06 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:P-CHANNEL SILICON POWER MOSFET |
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