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參數(shù)資料
| 型號： | 2SJ471 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P Channel DV-L MOS FET High Speed Power Switching |
| 中文描述： | 硅P通道的DV -蜇場效應(yīng)晶體管高速電源開關(guān) |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 47K |
| 代理商： | 2SJ471 |
2SJ471
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
Pch
Note2
–30
V
Gate to source voltage
±
20
V
Drain current
–30
A
Drain peak current
Note1
–120
A
Body to drain diode reverse drain current
–30
A
Channel dissipation
30
W
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Notes: 1. PW
≤
10
μ
s, duty cycle
≤
1 %
2. Value at Tc = 25
°
C
Tstg
–55 to +150
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ479 | Silicon P Channel DV-L MOS FET High Speed Power Switching |
| 2SJ479L | Silicon P Channel DV-L MOS FET High Speed Power Switching |
| 2SJ479S | Silicon P Channel DV-L MOS FET High Speed Power Switching |
| 2SJ485TP | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SJ485TP-FA | TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 4A I(D) | TO-252VAR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ471(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ471-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel DV-L MOS FET |
| 2SJ472-01 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| 2SJ472-01L | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:Power MOSFET |
| 2SJ472-01L_06 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:P-CHANNEL SILICON POWER MOSFET |
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