參數(shù)資料
型號(hào)： 2SJ463
廠商： NEC Corp.
英文描述： Relay Socket; Current Rating:10A; Mounting Type:Panel; Terminal Type:Solder
中文描述： P溝道MOS場(chǎng)效應(yīng)晶體管高速開關(guān)
文件頁數(shù)： 4/8頁
文件大?。?/td> 63K
代理商： 2SJ463
4
2SJ463A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - mA
–0.1 –1 –10 –100 –1000
R
D
0
10
20
30
40
50
60
V
GS
=
–10 V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
GS
- Gate to Source Voltage - V
0 –2 –4 –6 –8 –10
R
D
-
0
10
20
30
40
50
60
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
–1 –10 –100
V
GS
= 0
f = 1 MHz
C
i
,
o
,
r
10
100
1
C
iss
C
oss
C
rss
SWITCHING CHARACTERISTICS
I
D
- Drain Current - mA
–10 –100 –1000
V
DD
= –3 V
V
GS(on)
= –
4 V
R
in
= 10
t
d
,
r
,
d
,
f
10
100
1000
t
r
t
d(on)
t
f
t
d(off)
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
V
SD
- Source to Drain Voltage - V
–0.2 –0.4 –0.6 –0.8 –1.0 –1.2
I
D
-
–0.1
–1
–10
–100
–1000
T
A
=
–25 °C
T
A
=
25 °C
I
D
=
–1 mA
I
D
=
–100 mA
I
D
=
–10 mA
T
A
=
125 °C
T
A
=
75 °C
相關(guān)PDF資料
PDF描述
2SJ463A P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
2SJ466 SOCKET-DPDT,8-PIN SLIM
2SJ471 Silicon P Channel DV-L MOS FET High Speed Power Switching
2SJ479 Silicon P Channel DV-L MOS FET High Speed Power Switching
2SJ479L Silicon P Channel DV-L MOS FET High Speed Power Switching
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SJ463A 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
2SJ463A-T1 制造商:Renesas Electronics Corporation 功能描述:
2SJ463A-T1-A 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Pch MOSFET,30V,0.1A,23m ohm,SSP3 制造商:Renesas 功能描述:Trans MOSFET P-CH 30V 0.1A 3-Pin SC-70 T/R
2SJ464 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET P-CH 100V 18A 3PIN SC-67 - Rail/Tube
2SJ464(F) 功能描述:MOSFET MOSFET P-Ch 100V 18A Rdson 0.09 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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