參數(shù)資料
型號： 2SJ463
廠商： NEC Corp.
英文描述： Relay Socket; Current Rating:10A; Mounting Type:Panel; Terminal Type:Solder
中文描述： P溝道MOS場效應(yīng)晶體管高速開關(guān)
文件頁數(shù)： 3/8頁
文件大?。?/td> 63K
代理商： 2SJ463
3
2SJ463A
V
DS
= –3 V
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
A
- Ambient Temperature - °C
0 30 60 90 120 150
0
20
d
40
60
80
100
TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
0 –0.8 –1.6 –2.4 –3.2 –4.0
I
D
–0.001
–0.01
–0.1
–1
–10
–100
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - mA
–0.1 –1 –10 –100 –1000
I
f
I
1
10
100
1000
V
DS
= –3 V
T
A
= 125 °C
T
A
= 75 °C
T
A
= 25 °C
T
A
= –25 °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - mA
–0.1 –1 –10 –100 –1000
R
D
20
0
10
30
40
50
60
V
GS
= –2.5 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - mA
–0.1 –1 –10 –100 –1000
R
D
0
10
20
30
40
50
60
T
A
= 125 °C
T
A
= 75 °C
V
GS
= –4 V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
0 –1 –2 –3 –4 –5
I
D
0
–20
–40
–60
–80
–100
V
GS
= –3 V
V
GS
= –2.5 V
V
GS
= –10 V
V
GS
= –6 V
V
GS
= –4 V
T
A
= 25 °C
T
A
= –25 °C
T
A
= 125 °C
T
A
= 75 °C
T
A
= 125 °C
T
A
= 75 °C
T
A
= –25 °C
T
A
= 25 °C
T
A
= –25 °C
T
A
= 25 °C
相關(guān)PDF資料
PDF描述
2SJ463A P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
2SJ466 SOCKET-DPDT,8-PIN SLIM
2SJ471 Silicon P Channel DV-L MOS FET High Speed Power Switching
2SJ479 Silicon P Channel DV-L MOS FET High Speed Power Switching
2SJ479L Silicon P Channel DV-L MOS FET High Speed Power Switching
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SJ463A 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
2SJ463A-T1 制造商:Renesas Electronics Corporation 功能描述:
2SJ463A-T1-A 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Pch MOSFET,30V,0.1A,23m ohm,SSP3 制造商:Renesas 功能描述:Trans MOSFET P-CH 30V 0.1A 3-Pin SC-70 T/R
2SJ464 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET P-CH 100V 18A 3PIN SC-67 - Rail/Tube
2SJ464(F) 功能描述:MOSFET MOSFET P-Ch 100V 18A Rdson 0.09 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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