參數(shù)資料
型號(hào): 2SJ462
廠商: NEC Corp.
英文描述: P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
中文描述: P溝道MOS場(chǎng)效應(yīng)晶體管高速開關(guān)
文件頁(yè)數(shù): 4/6頁(yè)
文件大小: 63K
代理商: 2SJ462
2SJ462
4
SWITCHING CHARACTERISTICS
I
D
- Draint Current - A
–0.1 –1 –10
V
DD
= –3 V
V
GS(on)
= –3 V
Rin = 10
t
d
,
r
,
d
,
f
10
100
1000
t
r
t
d(on)
t
f
t
d(off)
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
V
SD
- Source to Drain Voltage - V
–0.4 –0.6 –0.8 –1.0 –1.2 –1.4
I
D
–0.001
–0.01
–0.1
–1
–10
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
GS
- Gate to Source Voltage - V
0 –2 –4 –6 –8 –10
R
D
0
0.1
0.2
0.3
I
D
= –2.5 A
–1.0 A
–0.5 A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
R
D
–0.001 –0.01 –0.1 –1 –10
0.2
0
0.1
0.3
0.4
0.5
0.6
T
A
= 125 C
75 C
25 C
–25 C
V
GS
= –4 V
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
–0.1 –1 –10
C
1
10
0.1
V
GS
= 0
f = 1 MHz
Ciss
Coss
Crss
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
Q
G
- Gate Charge - nC
0 8 16 24 32 40
V
D
0
4
8
12
V
G
0
2
4
8
V
DS
V
GS
V
DS
= –8 V
I
D
= –2.5 A
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