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參數(shù)資料
| 型號(hào)： | 2SJ462 |
| 廠商： | NEC Corp. |
| 英文描述： | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
| 中文描述： | P溝道MOS場(chǎng)效應(yīng)晶體管高速開關(guān) |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 63K |
| 代理商： | 2SJ462 |
2SJ462
2
ELECTRICAL SPECIFICATIONS (T
A
= +25 C)
Parameter
Symbol
MIN.
TYP.
MAX.
Unit
Conditions
Drain Cut-off Current
I
DSS
–10
μ
A
V
DS
= –12 V, V
GS
= 0
Gate Leakage Current
I
GSS
±
10
μ
A
V
GS
=
±
8.0 V, V
DS
= 0
Gate Cut-off Voltage
V
GS(off)
–0.7
–1.0
–1.3
V
V
DS
= –3.0 V, I
D
= –1.0 mA
Forward Transfer Admittance
|y
fs
|
1.5
S
V
DS
= –3.0 V, I
D
= –1.0 A
Drain to Source On-State
Resistance
R
DS(on)1
195
290
m
V
GS
= –2.5 V, I
D
= –0.5 A
Drain to Source On-State
Resistance
R
DS(on)2
135
190
m
V
GS
= –4.0, I
D
= –1.0 A
Input Capacitance
C
iss
940
pF
V
DS
= –3.0 V, V
GS
= 0
Output Capacitance
C
oss
835
pF
f = 1.0 MHz
Reverse Transfer Capacitance
C
rss
495
pF
Turn-On Delay Time
t
d(on)
45
ns
V
DD
= –3.0 V, I
D
= –1.0 A
V
GS(on)
= –3.0 V, R
G
= 10
R
L
= 3.0
Rise Time
t
r
225
ns
Turn-Off Delay Time
t
d(off)
140
ns
Fall Time
t
f
195
ns
Total Gate Charge
Q
G
12
nC
V
DS
= –8 V, I
D
= –2.5 A
V
GS
= –3.0 V, I
G
= –2 mA
Gate to Source Charge
Q
GS
2
nC
Gate to Drain Charge
Q
GD
7
nC
Diode Forward Voltage
V
F(S–D)
–0.86
V
I
F
= –2.5 A, V
GS
= 0
Reverse Recovery Time
t
rr
150
ns
I
F
= –2.5 A, V
GS
= 0
di/dt = 50 A/
μ
s
Reverse Recovery Charge
Q
rr
160
nC
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ462-T1(AZ) | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET P-CH 12V 2.5A 3-Pin(2+Tab) SC-84 T/R |
| 2SJ462-T1-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Pch MOSFET,12V,2.5A,0.195/0.135ohm,MP-2 |
| 2SJ463 | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
| 2SJ463A | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
| 2SJ463A-T1 | 制造商:Renesas Electronics Corporation 功能描述: |
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