參數(shù)資料
型號: 2SJ452
廠商: Hitachi,Ltd.
英文描述: Silicon P-Channel MOS FET
中文描述: 硅P溝道場效應(yīng)晶體管
文件頁數(shù): 5/8頁
文件大?。?/td> 40K
代理商: 2SJ452
2SJ452
5
0
–10
–20
–30
–40
–50
100
30
10
3
1
0.3
0.1
0.03
0.01
Ciss
Coss
Crss
V = 0
f = 1 MHz
C
Drain to Source Voltage V (V)
Typical Capacitance vs.
Drain to Source Voltage
–0.01–0.02
–0.05 –0.1 –0.2
Drain Current I (A)
–0.5
–1
20
10
2
5
1
0.2
0.5
tf
r
d(on)
t
d(off)
t
V = –10 V, V = –30 V
PW = 5
μ
s, duty < 1 %
S
μ
s
Switching Characteristics
–0.20
–0.16
–0.12
–0.08
–0.04
0
–0.2
–0.4
–0.6
–0.8
–1.0
V = 0
–5 V
Pulse Test
Source to Drain Voltage V (V)
R
D
Reverse Drain Current vs.
Source to Drain Voltage
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