參數(shù)資料
型號: 2SJ452
廠商: Hitachi,Ltd.
英文描述: Silicon P-Channel MOS FET
中文描述: 硅P溝道場效應(yīng)晶體管
文件頁數(shù): 4/8頁
文件大小: 40K
代理商: 2SJ452
2SJ452
4
–2.0
–1.6
–1.2
–0.8
–0.4
0
–2
–4
–6
–8
–10
I = –0.2 A
–0.1 A
–0.05 A
Pulse Test
Gate to Source Voltage V (V)
D
D
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
100
20
50
10
2
1
5
–0.01–0.02
–0.05 –0.1 –0.2
Drain Current I (A)
–0.5
–1
V = –2.5 V
–4 V
Pulse Test
D
R
D
Static Drain to Source on State Resistance
vs. Drain Current
10
8
6
4
2
–40
0
40
80
120
160
0
V = –4 V
I = –0.2 A
D
–0.05 A
–0.1 A
Pulse Test
Case Temperature Tc (
°
C)
Static Drain to Source on State Resistance
vs. Temperature
R
D
S
–0.01–0.02
–0.05 –0.1 –0.2
Drain Current I (A)
–0.5
–1
1
0.2
0.5
0.1
0.02
0.05
0.01
25
°
C
Tc = –25
°
C
75
°
C
V = –10 V
Pulse Test
F
Forward Transfer Admittance vs.
Drain Current
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