參數(shù)資料
型號: 2SJ450
廠商: Hitachi,Ltd.
英文描述: Silicon P-Channel MOS FET
中文描述: 硅P溝道場效應(yīng)晶體管
文件頁數(shù): 6/9頁
文件大?。?/td> 44K
代理商: 2SJ450
2SJ450
6
1000
200
500
100
20
–0.1 –0.2
50
di / dt = 50 A /
μ
s
V = 0, Ta = 25
°
C
–0.5
–1
–2
–5
–10
Reverse Drain Current I (A)
R
Body to Drain Diode Reverse
Recovery Time
0
–10
–20
–30
–40
–50
500
200
100
20
10
50
5
Ciss
Coss
Crss
V = 0
f = 1 MHz
C
Drain to Source Voltage V (V)
Typical Capacitance vs.
Drain to Source Voltage
0
–20
–40
–60
–80
0
0
–4
–8
–12
–16
–20
–100
2
Gate Charge Qg (nc)
4
6
8
10
V
GS
V
DS
V = –10 V
–25 V
–50 V
V = –50 V
–25 V
–10 V
I = –2 A
D
D
G
G
Dynamic Input Characteristics
200
100
20
50
10
2
–0.1 –0.2
5
–0.5
–1
–2
–5
–10
tf
r
d(on)
t
d(off)
t
V = –10 V, V = –30 V
duty < 1 %
Drain Current I (A)
S
Switching Characteristics
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SJ451 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET
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2SJ452 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P-Channel MOS FET
2SJ453 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 250V V(BR)DSS | 3A I(D) | TO-251