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參數(shù)資料
| 型號： | 2SJ450 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P-Channel MOS FET |
| 中文描述： | 硅P溝道場效應(yīng)晶體管 |
| 文件頁數(shù)： | 5/9頁 |
| 文件大小： | 44K |
| 代理商： | 2SJ450 |
2SJ450
5
–2.0
–1.6
–1.2
–0.8
–0.4
0
–2
–4
–6
–8
–10
I = –1.5 A
–1 A
–0.5 A
Gate to Source Voltage V (V)
D
D
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Pulse Test
20
10
2
5
1
0.2
0.5
–0.1 –0.2
–0.5
–1
–2
–5
–10
V = –2.5 V
–4 V
Drain Current I (A)
D
R
D
Static Drain to Source on State Resistance
vs. Drain Current
Pulse Test
10
8
6
4
2
–40
0
40
80
120
160
0
V = –2.5 V
I = –1.5 A
D
–0.5 A
–1.0 A
–4 V
1.5 A
–1.0 A
–0.5 A
Case Temperature Tc (
°
C)
R
D
S
Pulse Test
Static Drain to Source on State Resistance
vs. Temperature
0.03
0.01
10
3
1
0.3
0.1
–0.01 –0.03 –0.1 –0.3
Drain Current I (A)
–1
–3
–10
25
°
C
Tc = –25
°
C
75
°
C
F
Forward Transfer Admittance vs.
Drain Current
V = –10 V
Pulse Test
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PDF描述 |
|---|---|
| 2SJ451 | Silicon P-Channel MOS FET |
| 2SJ452 | Silicon P-Channel MOS FET |
| 2SJ458 | P CHANNEL MOS SILICON TRANSISTOR |
| 2SJ459 | Ultrahigh-Speed Switching Applications |
| 2SJ460 | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ451 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ451ZK-TL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ451ZK-TR-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ452 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P-Channel MOS FET |
| 2SJ453 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 250V V(BR)DSS | 3A I(D) | TO-251 |
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