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參數(shù)資料
| 型號： | 2SJ390 |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 41K |
| 代理商： | 2SJ390 |
2SJ390
–1.0
–0.8
–0.6
–0.4
-0.2
0
Gate to Source Voltage V (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
D
D
–4
–8
–12
–16
–20
Pulse Test
–2 A
I = –5 A
–1 A
Drain Current I (A)
D
R
D
Static Drain to Source on State Resistance
vs. Drain Current
5
2
1
0.2
0.5
0.1
0.05
–0.1 -0.3
–1
–3
–10
–30
–100
–10 V
V = –4 V
Pulse Test
0.5
0.4
0.3
0.2
0.1
–40
0
40
80
120
160
Case Temperature Tc (°C)
0
R
D
S
Static Drain to Source on State Resistance
vs. Temperature
Pulse Test
V = –4 V
–10 V
I = –5 A
–5 A
–1, –2 A
–1, –2 A
Drain Current I (A)
F
f
Forward Transfer Admittance vs.
Drain Current
–0.1 –0.2
–0.5
–1
–2
–5
–10
50
20
10
2
5
1
0.5
V = 10 V
Pulse Test
Tc = –25 °C
75 °C
25 °C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ399 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P-Channel MOS FET |
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| 2SJ400-DL-E | 制造商:SANYO 功能描述:Pch 30V 35A 0.035 rlo?ec Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFETP CH30V35ASOT404 |
| 2SJ401 | 制造商:Toshiba America Electronic Components 功能描述: |
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