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參數(shù)資料
| 型號： | 2SJ390 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 41K |
| 代理商： | 2SJ390 |
Application
High speed power switching
Features
Low on–resistance
High speed switching
Low drive current
4 V gate drive device can be driven from
5 V source
Suitable for Switching regulator, DC – DC
converter
Avalanche Ratings
123
1
2
3
TO–220FM
1. Gate
2. Drain
3. Source
Table 1 Absolute Maximum Ratings
(Ta = 25°C)
Item
———————————————————————————————————————————
Drain to source voltage
V
DSS
———————————————————————————————————————————
Gate to source voltage
V
GSS
———————————————————————————————————————————
Drain current
I
D
———————————————————————————————————————————
Drain peak current
I
D(pulse)
*
———————————————————————————————————————————
Body–drain diode reverse drain current
I
DR
———————————————————————————————————————————
Avalanche current
I
AP
***
———————————————————————————————————————————
Avalanche energy
E
AR
***
———————————————————————————————————————————
Channel dissipation
Pch**
———————————————————————————————————————————
Channel temperature
Tch
———————————————————————————————————————————
Storage temperature
Tstg
———————————————————————————————————————————
*
PW
≤
10 μs, duty cycle
≤
1 %
**
Value at Tc = 25 °C
***
Value at Tch = 25 °C, Rg
≥
50
Symbol
Ratings
Unit
–60
V
±20
V
–10
A
–40
A
–10
A
–10
A
8.5
mJ
25
W
150
°C
–55 to +150
°C
2SJ390
Silicon P Channel MOS FET
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ399 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P-Channel MOS FET |
| 2SJ400 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SJ400-DL-E | 制造商:SANYO 功能描述:Pch 30V 35A 0.035 rlo?ec Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFETP CH30V35ASOT404 |
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| 2SJ401(Q) | 制造商:Toshiba 功能描述:Pch -60V -20A 0.045@10V TO220FL Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET P-CH 60V 20A TO-220FL |
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