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參數(shù)資料
| 型號： | 2SJ389S |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P-Channel MOS FET(P溝道MOSFET) |
| 中文描述： | 硅P溝道場效應(yīng)晶體管性（P溝道MOSFET的） |
| 文件頁數(shù)： | 3/10頁 |
| 文件大小： | 64K |
| 代理商： | 2SJ389S |
2SJ389(L), 2SJ389(S)
3
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
–60
—
—
V
I
D
= –10 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
—
—
V
I
G
= ±100 μA, V
DS
= 0
Gate to source leak current
I
GSS
—
—
±10
μA
V
GS
= ±16 V, V
DS
= 0
V
DS
= –50 V, V
GS
= 0
I
D
= –1 mA, V
DS
= –10 V
I
D
=
–5 A
V
GS
= –10 V*
I
D
= –5 A
V
GS
= –4 V*
I
D
= –5 A
V
DS
= –10 V*
V
DS
= –10 V
V
GS
= 0
f = 1 MHz
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
—
—
–100
μA
V
GS(off)
R
DS(on)
–1.0
—
–2.25
V
Static drain to source on state
resistance
—
0.1
0.135
1
—
0.14
0.2
1
Forward transfer admittance
|y
fs
|
4
8
—
S
1
Input capacitance
Ciss
—
910
—
pF
Output capacitance
Coss
—
440
—
pF
Reverse transfer capacitance
Crss
—
170
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
—
15
—
ns
I
D
= –5 A
V
GS
= –10 V
R
L
= 6
Rise time
—
85
—
ns
Turn-off delay time
—
220
—
ns
Fall time
—
145
—
ns
Body to drain diode forward
voltage
—
–1.0
—
V
I
F
= –10 A, V
GS
= 0
Body to drain diode reverse
recovery time
Note
1. Pulse Test
t
rr
—
170
—
μs
I
= –10 A, V
= 0,
diF/dt = 50 A/μs
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