參數(shù)資料
型號: 2SJ389S
廠商: Hitachi,Ltd.
英文描述: Silicon P-Channel MOS FET(P溝道MOSFET)
中文描述: 硅P溝道場效應(yīng)晶體管性(P溝道MOSFET的)
文件頁數(shù): 2/10頁
文件大?。?/td> 64K
代理商: 2SJ389S
2SJ389(L), 2SJ389(S)
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
*
I
DR
I
AP
*
E
AR
*
Pch*
–60
V
Gate to source voltage
±20
V
Drain current
–10
A
Drain peak current
1
–40
A
Body to drain diode reverse drain current
–10
A
Avalanche current
3
–10
A
Avalanche energy
3
8.5
mJ
Channel dissipation
2
30
W
Channel temperature
Tch
150
°C
Storage temperature
Notes 1. PW
10 μs, duty cycle
1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg
50
Tstg
–55 to +150
°C
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