參數(shù)資料
型號: 2SJ384L
廠商: Hitachi,Ltd.
英文描述: Silicon P-Channel MOS FET(P溝道MOSFET)
中文描述: 硅P溝道場效應(yīng)晶體管性(P溝道MOSFET的)
文件頁數(shù): 6/10頁
文件大小: 64K
代理商: 2SJ384L
2SJ384(L), 2SJ384(S)
6
0.5
0.4
0.3
0.2
0.1
–40
0
40
80
120
160
Case Temperature Tc (°C)
0
R
D
S
Static Drain to Source on State Resistance
vs. Temperature
Pulse Test
–10 V
I = –10 A
–2, –5, –10 A
V = –2.5 V
–5 A
–2 A
Drain Current I (A)
F
f
Forward Transfer Admittance vs.
Drain Current
50
20
10
2
5
1
0.5
–0.1 –0.3
–1
–3
–10
–30
–100
Tc = –25 °C
75 °C
25 °C
V = –10 V
Pulse Test
Reverse Drain Current I (A)
R
Body to Drain Diode Reverse
Recovery Time
500
200
100
20
50
10
5
–0.1 –0.3
–1
–3
–10
–30
–100
di / dt = 50 A /
μ
s
V = 0, Ta = 25
°
C
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SJ384S 制造商:未知廠家 制造商全稱:未知廠家 功能描述:
2SJ386 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P-Channel MOS FET
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2SJ387 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P-Channel MOS FET