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參數資料
| 型號： | 2SJ384L |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P-Channel MOS FET(P溝道MOSFET) |
| 中文描述： | 硅P溝道場效應晶體管性（P溝道MOSFET的） |
| 文件頁數： | 3/10頁 |
| 文件大?。?/td> | 64K |
| 代理商： | 2SJ384L |
2SJ384(L), 2SJ384(S)
3
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
–60
—
—
V
I
D
= –10 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
—
—
V
I
G
= ±100 μA, V
DS
= 0
Gate to source leak current
I
GSS
—
—
±10
μA
V
GS
= ±16 V, V
DS
= 0
V
DS
= –50 V, V
GS
= 0
I
D
= –1 mA, V
DS
= –10 V
I
D
= –8 A
V
GS
= –10 V*
I
D
= –3 A
V
GS
= –2.5 V*
I
D
= –8 A
V
DS
= –10 V*
V
DS
= –10 V
V
GS
= 0
f = 1 MHz
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
—
—
–250
μA
V
GS(off)
R
DS(on)
–0.5
—
–1.5
V
Static drain to source on state
resistance
—
0.07
0.01
1
—
0.12
0.19
1
Forward transfer admittance
|y
fs
|
8
14
—
S
1
Input capacitance
Ciss
—
2170
—
pF
Output capacitance
Coss
—
830
—
pF
Reverse transfer capacitance
Crss
—
130
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
—
16
—
ns
I
D
= –8 A
V
GS
= –10 V
R
L
= 3.75
Rise time
—
75
—
ns
Turn-off delay time
—
360
—
ns
Fall time
—
180
—
ns
Body to drain diode forward
voltage
—
–1.0
—
V
I
F
= –15 A, V
GS
= 0
Body to drain diode reverse
recovery time
Note
1. Pulse Test
t
rr
—
130
—
ns
I
= –15 A, V
= 0,
diF/dt = 50 A/μs
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| 2SJ384S | Silicon P-Channel MOS FET(P溝道MOSFET) |
| 2SJ386 | Silicon P-Channel MOS FET |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SJ384S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| 2SJ386 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P-Channel MOS FET |
| 2SJ386TZ-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ387 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P-Channel MOS FET |
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