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參數(shù)資料
| 型號： | 2SJ384(S) |
| 英文描述： | TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 15A I(D) | TO-263AB |
| 中文描述： | 晶體管| MOSFET的| P通道| 60V的五（巴西）直| 15A條（?。﹟對263AB |
| 文件頁數(shù)： | 7/12頁 |
| 文件大?。?/td> | 56K |
| 代理商： | 2SJ384(S) |
2SJ387(L), 2SJ387(S)
4
40
30
20
10
0
Channel
Dissipation
Pch
(W)
50
100
150
200
Case Temperature
Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage
V
(V)
DS
Drain
Current
I
(A)
D
Maximum Safe Operation Area
–100
–30
–10
–3
–1
–0.3
–0.1
–0.5
–1
–2
–5
–10
–20
–50
Ta = 25 °C
PW
=
10
ms
(1shot)
Operation in
this area is
limited by R DS(on)
1 ms
10 s
100 s
DC
Operation
(Tc
=
25
°C)
–20
–16
–12
–8
–4
0
Drain to Source Voltage
V
(V)
DS
Drain
Current
I
(A)
D
Typical Output Characteristics
–2
–4
–6
–8
–10
V
= –1.5 V
GS
Pulse Test
–2.5 V
–2 V
–10 V
–5 V
–4 V
–10
–8
–6
–4
–2
0
Gate to Source Voltage
V
(V)
GS
Drain
Current
I
(A)
D
Typical Transfer Characteristics
Tc = –25 °C
75 °C
25 °C
V
= –10 V
Pulse Test
DS
–1
–2
–3
–4
–5
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PDF描述 |
|---|---|
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| 2SJ384S | |
| 2SJ388(L) | TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 10A I(D) | TO-251AA |
| 2SJ469 | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ386 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P-Channel MOS FET |
| 2SJ386TZ-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ387 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P-Channel MOS FET |
| 2SJ387L | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P-Channel MOS FET |
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