參數(shù)資料
型號: 2SJ472-01
文件頁數(shù): 1/9頁
文件大小: 45K
代理商: 2SJ472-01
2SJ479(L), 2SJ479(S)
Silicon P Channel DV–L MOS FET
High Speed Power Switching
ADE-208-541 (Z)
1st. Edition
Sep. 1997
Features
Low on-resistance
R
DS(on) = 25 m typ.
4V gate drive devices.
High speed switching
Outline
1. Gate
2. Drain
3. Source
4. Drain
1
2
3
4
1
2
3
4
LDPAK
G
D
S
相關(guān)PDF資料
PDF描述
2SJ472-01S Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
2SJ473-01
2SJ473-01S Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
2SJ474-01
2SJ474-01S Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SJ472-01L 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:Power MOSFET
2SJ472-01L_06 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:P-CHANNEL SILICON POWER MOSFET
2SJ472-01LSC 制造商:Fuji Electric 功能描述:
2SJ472-01S 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:P-CHANNEL SILICON POWER MOSFET
2SJ473-01 制造商:未知廠家 制造商全稱:未知廠家 功能描述: