參數(shù)資料
型號: 2SJ353
廠商: NEC Corp.
英文描述: P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
中文描述: 個P -溝道MOS場效應管高高速開關
文件頁數(shù): 4/6頁
文件大?。?/td> 58K
代理商: 2SJ353
2SJ353
4
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
R
D
–0.01
1
0.8
0.6
0.4
0.2
0
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
R
D
0
1
0.8
0.6
0.4
0.2
V
GS
- Gate to Source Voltage - V
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
C
i
,
o
,
r
–1
1 000
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
t
d
,
r
,
d
,
f
–0.1
100
I
D
- Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
I
S
–10
–1
–0.1
–0.01
–0.001
V
SD
- Source to Drain Voltage - V
–0.1
–1
–10
–2
–5
–100
–10
–0.2
–0.5
–1
–2
–5
1.2
V
GS
= –10 V
T
A
= 75 C
25 C
–25 C
–4
–8
–12
–16
–20
I
D
= –0.8 A
–1.0 A
500
200
100
50
20
10
–10
–20
–50
V
GS
= 0
f = 1 MHz
C
iss
C
oss
C
rss
50
20
10
5
2
1
V
DD
= –30 V
V
GS(on)
= –10 V
R
G
= 10
t
f
t
d(off)
t
f
t
d(on)
0.2
0.4
0.6
0.8
1
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