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參數(shù)資料
| 型號(hào)： | 2SJ350-E |
| 元件分類： | JFETs |
| 英文描述： | 6 A, 120 V, 0.9 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | SC-67, TO-220FM, 3 PIN |
| 文件頁(yè)數(shù)： | 7/9頁(yè) |
| 文件大?。?/td> | 96K |
| 代理商： | 2SJ350-E |
2SJ350
Rev.2.00 Sep 07, 2005 page 5 of 6
–10
0
–2
–4
–6
–8
0
Source to Drain Voltage
VSD
(V)
Reverse
Drain
Current
I
DR
(A)
Reverse Drain Current vs.
Source to Drain Voltage
–0.4
–0.8
–1.2
–1.6
–2.0
Pulse Test
–10 V
–5 V
VGS = 0, 5 V
tr
td(on)
Vin
90%
10%
Vout
td(off)
90%
10%
tf
Switching Time Test Circuit
Waveform
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized
Transient
Thermal
Impedance
γs
(t)
3
1
0.3
0.1
0.03
0.01
10
100
1 m
10 m
100 m
1
10
Tc = 25°C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot
pulse
PDM
PW
T
D =
PW
T
θch – c (t) = γ s (t) θch – c
θch – c = 6.25°C/W, Tc = 25°C
Vin Monitor
D.U.T.
Vin
–10 V
RL
Vout
Monitor
50
VDD
= –30 V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ350-E | 6 A, 120 V, 0.9 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SJ355 | 2 A, 30 V, 0.6 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ359TP | 5 A, 60 V, 0.25 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SK1915TE24R | 6 A, 600 V, 1.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1915TE24L | 6 A, 600 V, 1.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ351 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P-Channel MOS FET |
| 2SJ351(E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SJ351-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ352 | 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET P-CH 200V 8A 3PIN TO-3P - Rail/Tube |
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