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參數(shù)資料
| 型號： | 2SJ350-E |
| 元件分類： | JFETs |
| 英文描述： | 6 A, 120 V, 0.9 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | SC-67, TO-220FM, 3 PIN |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 96K |
| 代理商： | 2SJ350-E |
2SJ350
Rev.2.00 Sep 07, 2005 page 2 of 6
Absolute Maximum Ratings
(Ta = 25
°C)
Item
Symbol
Value
Unit
Drain to source voltage
VDSS
–120
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
–6
A
Drain peak current
ID (pulse)
Note 1
–12
A
Body to drain diode reverse drain current
IDR
–6
A
Channel dissipation
Pch
Note 2
20
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 s, duty cycle ≤ 1%
2. Value at Tc = 25
°C
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V (BR) DSS
–120
—
V
ID = –10 mA, VGS = 0
Gate to source breakdown voltage
V (BR) GSS
±20
—
V
IG =
±100 A, VDS = 0
Gate to source leak current
IGSS
—
±10
A
VGS =
±16 V, VDS = 0
Zero gate voltage drain current
IDSS
—
–250
A
VDS = –100 V, VGS = 0
Gate to source cutoff voltage
VGS (off)
–1.0
—
–2.0
V
ID = –1 mA, VDS = –10 V
RDS (on)
—
0.5
0.7
ID = –4 A, VGS = –10 V
Note 3
Static drain to source on state resistance
RDS (on)
—
0.7
0.9
ID = –4 A, VGS = –4 V
Note 3
Forward transfer admittance
|yfs|
3.0
5.0
—
S
ID = –4 A, VDS = –10 V
Note 3
Input capacitance
Ciss
—
900
—
pF
Output capacitance
Coss
—
265
—
pF
Reverse transfer capacitance
Crss
—
65
—
pF
VDS = –10 V
VGS = 0
f = 1 MHz
Turn-on delay time
td (on)
—
11
—
ns
Rise time
tr
—
45
—
ns
Turn-off delay time
td (off)
—
170
—
ns
Fall time
tf
—
80
—
ns
ID = –4 A
VGS = –10 V
RL = 7.5
Body to drain diode forward voltage
VDF
—
–1.2
—
V
IF = –6 A, VGS = 0
Body to drain diode reverse recovery time
trr
—
240
—
ns
IF = –6 A, VGS = 0
diF/dt = 50 A/
s
Note:
3. Pulse test
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ351 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P-Channel MOS FET |
| 2SJ351(E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SJ351-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ352 | 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET P-CH 200V 8A 3PIN TO-3P - Rail/Tube |
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